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auto spm ?2 013 fairchild semiconductor corporation 1 www.fair ch ildsemi.com ft co3v455a1 rev . c2 FTCO3V455A1 3-phase inverter automotive power module april 2013 FTCO3V455A1 3-phase inverter automotive power module general description the FTCO3V455A1 is a 40v low rds(on) automotive qualified features ? 40v-150a 3-phase trench mosfet inverter bridge ? 1% precision shunt current sensing ? temperature sensing ? dbc substrate ? 100% lead free and rohs compliant 2000/53/c directive. power module featuring a 3-phase mosfet inverter optimized for 12v battery systems. it includes a precision shunt resistor for current sensing an ntc for temperature sensing and an rc snubber circuit. the module utilizes fairchild ' s trench mosfet technology and it is designed to provide a very compact and high performance variable speed motor drive for applications like electric power steering, electro-hydraulic power steering, electric water pumps, electric oil pumps. the power module is 100% lead free, rohs and ul compliant. ben efit s ? low junction-sink thermal resistance ? compact motor design ? low inverter electrical resistance ? high current handling ? highly integrated compact design ? better emc and electrical isolation ? easy and reliable installation ? improved overall system reliability ? ul94v-0 compliant ? isolation rating of 2500vrms/min ? mounting through screws ? automotive qualified applications ? electric and electro-hydraulic power steering ? electric water pump ? electric oil pump ? electric fan abso lute maximum ratings (t j = 25c, unless ot herwise specified) symbol parameter rating un it v ds (q1~q6) dra in to source voltage 40 v v gs (q 1~q6) gate to source v oltage 20 v i d (q 1~q6 ) drain current continuous(t c gs = 10v) 150 a e as (q 1~q 6) single pulse avalanche energy (*note 1) 947 mj p d power dissip ation 115 w t j maxi mum juncti on temperature 175 c t stg s tor age temperature 125 c figure 1.schematic figure 2. package = 25c, v ?
?2 013 fairchild semiconductor corporation 2 www.fair c hildsemi.com ft co3v455a1 rev . c2 FTCO3V455A1 3-phase inverter automotive power module pin configuration pin description figure 3. pi n n umber pin name pin descriptions 1 temp 1 ntc thermistor terminal 1 2 temp 2 ntc thermistor terminal 2 3 phase w sense source of hs w and drain of ls w 4 gate hs w gate of hs phase w mosfet 5 gate ls w gate of ls phase w mosfet 6 phase v sense source of hs v and drain of ls v 7 gate hs v gate of hs phase v mosfet 8 gate ls v gate of ls phase v mosfet 9 phase u sense source of hs u and drain of ls u 10 gate hs u gate of hs phase u mosfet 11 vbat sense drain of hs u, v and w mosfet 12 gate ls u gate of ls phase u mosfet 13 shunt p source of ls u, v w mosfets / shunt + 14 shunt n negative shunt terminal (shunt -) 15 vbat positive battery terminal 16 gnd negative battery terminal 17 phase u motor phase u 18 phase v motor phase v 19 phase w motor phase w
?2 013 fairchild semiconductor corporation 3 www.fair ch ildsemi.com ft co3v455a1 rev . c2 FTCO3V455A1 3-phase inverter automotive power module internal equivalent circuit figure 4. temp 1 temp 2 shunt n shunt p gate hs w gate hs v gate hs u vbat sense vbat phase u phase v phase w gnd gate l s u gate l s v gate ls w csr phase1 sense phase2 sense phase3 sense
?2 013 fairchild semiconductor corporation 4 www.fair c hildsemi.com ft co3v455a1 rev . c2 FTCO3V455A1 3-phase inverter automotive power module flammability information all mater i als present in the power module meet ul flammability rating class 94v-0 or higher. solder solde r used is a lead free snagcu alloy. compliance to rohs the pow er module is 1 00% lead free and rohs compiant with the 2000/53/c directive.
?2 013 fairchild semiconductor corporation 5 www.fair c hildsemi.com ft co3v455a1 rev . c2 FTCO3V455A1 3-phase inverter automotive power module absolute maximum ratings (t j = 25c, unless ot herwise specified) symbol parameter rating un it v ds (q 1~q6) dra in to source voltage 40 v v gs (q 1~q6) gate to source v oltage 20 v i d (q 1~q6 ) drain current continuous(t c = 25c, v gs = 10v) 150 a e as (q1~q 6) single pulse avalanche energy (*note 1) 947 mj p d power dissip ation 115 w t j maxi mum juncti on temperature 175 c t stg s tor age temperature 125 c th erma l resistance symbol parameter min. typ. max. unit rthjs the rmal resis - t ance junction to case, single inverter fet, pkg center (*note 2) q1 ther mal r esistance j -c - 1.3 1.7 c/w q2 thermal resistance j -c - 1.3 1.7 c/w q3 thermal resistance j -c - 1.3 1.7 c/w q4 thermal resistance j -c - 1.2 1.6 c/w q5 thermal resistance j -c - 1.2 1.6 c/w q6 thermal resistance j -c - 1.2 1.6 c/w t j maximum juncti on temperature - 175 c t s operating sink t emper ature -40 120 c t stg s tor age temperature -40 125 c notes: .* no te 1 - starting tj=25 c ,vds=20v,ias=64a,l= 480uh. * note 2 -these values are bas ed on thermal simulations and pv level measurements. these values as sume a single mosfet is on, and the test cond ition for referenced temperature is ?package cente r?. this means that the dt is measured betw een the tj of each mosfet and the bottom surface temperature immediately under the thermal media in the center of the package.
?2 013 fairchild semiconductor corporation 6 www.fair c hildsemi.com ft co3v455a1 rev . c2 FTCO3V455A1 3-phase inverter automotive power module electrical characteristics (t j = 25 c, unless other wise specified) symbol parame ter t est conditions min typ max units bv dss d-s breakdow n voltage (inverter mosfets) v gs =0, i d =25 0ua 40 - - v v gs gate to source v o ltage (inverter mosfets) - -20 - 20 v v th thr e shold voltage (inverter mosfets) v gs =v ds , i d =250ua , t j =25 c 2.0 2.8 4.0 v v sd mo sfet body diode forward voltage v gs =0v , i s =80a, t j =25 c 0.8 1.28 v r ds(o n)q1 invert er high side mosf ets q1 (see *note3) v gs =10 v , i d =80a, t j =25 c - m r ds(o n)q2 invert er high side mosf ets q2 (see *note3) v gs =10 v , i d =80a, t j =25 c - m r ds(o n)q3 invert er high side mosf ets q3 (see *note3) v gs =10 v , i d =80a, t j =25 c - m r ds(o n)q4 inverter low side mosfet s q4 (see *note3) v gs =10v , i d =80a, t j =25c - m r ds(o n)q5 inverter low side mosfet s q5 (see *note3) v gs =10 v , i d =80a, t j =25 c - m r ds(o n)q6 inverter low side mosfet s q6 (see *note3) v gs =10 v , i d =80a, t j =25 c - m i dss inverter mosf ets (uh,ul,vh,vl,wh,wl) v gs =0v , v ds =32v , t j =25c - - 1.0 ua i gss inverter mos f ets gate to source leakage current v gs = 2 0v - - 100 na t o tal loop resistance vlink(+) - v0 (-) v gs =10 v ,i d =80a,t j =25 c - m t e mperature sense (ntc thermistor) symbol t est c onditions test time min typ max units voltage current=1ma, temperature=25c t=0.5ms 7.5 - 12 v cu rre nt sense resistor symbol t est c onditions test time min typ max units resist an ce cur r ent senset resistor current = 80a t=0.5ms 0.46 - 0.53 m 1.15 1.66 1.22 1.73 1.31 1.82 1.36 1.87 1.57 2.08 1.86 2.32 4.69 5.5 * note 3 - all mosfets have same die size and rdson. the different rdson values listed in the datasheet are due to the different access points available inside the module for rdson measurement. while the high side mosfets (q1, q2, q3) have source sense wire bonds, the low side mosfets (q4, q5, q6) do not have source sense wire bonds, thus resulting in higher rdson values.
?2013 fairchil d s emiconductor corporation 7 www.fairch ildsemi.com FTCO3V455A1 rev. c2 FTCO3V455A1 3-phase inverter automotive power module typical characteristics (generated using mosfets assembled in a to263 package, for reference purposes only) figure 5. 11 01 0 0 0.1 1 10 100 10 00 limi te d by package 10us 10 0u s 1ms 10ms i d , drain curre nt (a) v ds , drai n to s ource voltage (v) ope r ation in this area may be limited by r ds (on) sing l e pulse t j = max rat e d t c = 25 o c dc 4000 for w ard bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 500 star t ing t j = 150 o c star t ing t j = 25 o c i as , av al anche current (a) t av , time in avalanche (ms) 5000 t av = (l)(i as )/(1.3 *ra ted bv dss - v dd ) if r = 0 if r 0 t av = (l/r)l n[(i as *r)/ ( 1.3*rated bv dss - v dd ) +1] note: ref er to fairchild application notes an7514 and an7515 figure 6 . unclamped inductive switching c apability figure 7. 2.02 . 53.03.54.04.55.0 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse du ra tion = 80 s duty cycle = 0 . 5% max v dd = 5v i d , drai n current (a) v gs , ga te t o source voltage (v) transfer ch ara cteristics figure 8. 01234 0 40 80 120 16 0 i d , drai n current (a) v ds , dra in to source voltage (v) pulse durat i on = 80 s duty cy cle = 0.5% max v gs = 10v v gs = 5v v gs = 4.5v v gs = 3.5v v gs = 4v saturation characteristics fi gu re 9. 345678 9 10 0 10 20 30 40 50 r ds(on ) , drain to sour ce o n-resistance ( m ) v gs , gat e to source voltage ( v ) t j = 25 o c t j = 175 o c pulse d u ration = 80 s duty cy c le = 0.5% max drain to so urc e on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t j , junct i on temperature ( o c ) normal i zed drain to source on-resistance i d = 80a v gs = 10v pulse durat i on = 80 s duty cy cle = 0.5% max norm alized drain to source on resistance vs junction temperature figure 9 . 34 567 8 9 1 0 0 10 20 30 40 50 r ds(on ) , drain to sour ce o n-resistance ( m ) v gs , gat e to source voltage ( v ) t j = 25 o c t j = 175 o c pulse d u ration = 80 s duty cy c le = 0.5% max drain to so urc e on-res i stance variation vs gate to source voltage figure 5 . 11 01 0 0 0.1 1 10 100 10 00 limi te d by package 10us 100us 1ms 10ms i d , drain cur r ent (a) v ds , drai n to s ource voltage (v) oper ation in this area may be limited by r ds (on) sing l e pulse t j = max rat e d t c = 25 o c dc 4000 for w ard bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 500 star t ing t j = 150 o c star t ing t j = 25 o c i as , av al anche current (a) t av , time in avalanche (ms) 5000 t av = (l)(i as )/(1.3 *ra ted bv dss - v dd ) if r = 0 if r 0 t av = (l/r)l n[(i as *r)/ ( 1.3*rated bv dss - v dd ) +1] note: ref er to fairchild application notes an7514 and an7515 figure 6 . unclamped inductive switching c apability figure 7 . 2.02 . 53.03.54.04.55.0 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse du ra tion = 80 s duty cycle = 0 . 5% max v dd = 5v i d , drai n current (a) v gs , ga te t o source voltage (v) transfer ch ara cteristics figure 8 . 01234 0 40 80 120 16 0 i d , dr ai n current (a) v ds , dra in to source voltage (v) pulse durati on = 80 s duty cy cle = 0.5% max v gs = 10v v gs = 5v v gs = 4.5v v gs = 3.5v v gs = 4v saturation characteristics fi gu re 9 . 345678 9 10 0 10 20 30 40 50 r ds(on ) , drain to sour ce o n-resistance ( m ) v gs , gat e to source voltage ( v ) t j = 25 o c t j = 175 o c pulse d u ration = 80 s duty cy c le = 0.5% max drain to so urc e on-res i stance variation vs gate to source voltage figure 1 0. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t j , junct i on temperature ( o c ) normal i zed drain to source on-resistance i d = 80a v gs = 10v pulse durat i on = 80 s duty cy cle = 0.5% max norm alized drain to source on resistance vs junction temperature
?2013 fairchil d semiconductor corporation 8 www.fairc h ildsemi.com FTCO3V455A1 rev . c2 FTCO3V455A1 3-phase inverter automotive power module typical ch aracteristics (generated using mosfets assembled in a to263 package, for reference purposes only) figu re 5. 11 01 0 0 0.1 1 10 10 0 10 00 lim i ted by package 10u s 10 0u s 1ms 10m s i d , drain cur rent (a) v ds , dra i n to source voltage (v) op e ration in this area may be limited by r ds (on ) sin g le pulse t j = max ra t ed t c = 25 o c dc 4000 fo r ward bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 500 sta r ting t j = 15 0 o c sta r ting t j = 25 o c i as , a v alanche current (a) t av , tim e in avalanche (ms) 5000 t av = (l)(i as )/(1. 3 *rated bv dss - v dd ) if r = 0 if r 0 t av = (l/ r)l n[(i as *r )/ (1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6 . unclamped inductive switching c apability figure 7. 2. 02 .53.03.54.04.55.0 0 40 80 120 160 t j = -5 5 o c t j = 25 o c t j = 1 75 o c pulse du ration = 80 s duty cycl e = 0 .5% max v dd = 5v i d , dra i n current (a) v gs , g a te to source voltage (v) tran sfer ch aracteristics figure 8. 01234 0 40 80 12 0 16 0 i d , dr ain current (a) v ds , dr a in to source voltage (v) pulse dura t ion = 80 s duty cycle = 0.5% max v gs = 10 v v gs = 5v v gs = 4.5v v gs = 3. 5v v gs = 4v sa turation characteristics fi gure 9. 34567 8 910 0 10 20 30 40 50 r ds(o n ) , drain to sour ce on-resistance ( m ) v gs , ga t e to source voltage ( v ) t j = 25 o c t j = 17 5 o c pul se d uration = 80 s dut y cy cle = 0.5% max drai n to so urce on-res i stance variation vs gate to source voltage figure 10. -80 - 40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t j , j unct ion temperature ( o c ) norm al ized drain to source on-resistance i d = 80 a v gs = 10v pulse dura t ion = 80 s duty cycle = 0.5% max no rm alized drain to source on resistance vs junction temperature figu re 9. 34 567 8 9 1 0 0 10 20 30 40 50 r ds(o n ) , drain to sour ce on-resistance ( m ) v gs , ga t e to source voltage ( v ) t j = 25 o c t j = 17 5 o c pul se d uration = 80 s dut y cy cle = 0.5% max drai n to so urce on-res i stance variation vs gate to source voltage figu re 1 1 . -80 - 40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 normal ized gate threshold voltage t j , j unct ion temperature ( o c ) v gs = v ds i d = 250 a normalized gate thre shold voltage vs junction temperature figure 1 2 . normalized drain to source breakdown voltage vs junction temperature -80 - 40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 1.15 t j , j unct ion temperature ( o c ) normalized drain to source breakdown voltage i d = 25 0 a figu re 1 3 . 0.1 1 10 100 1 000 10 000 f = 1 mhz v gs = 0v c rss c oss c iss capaci tance (pf) v ds , dr a in to source voltage ( v ) 50 40000 capa citanc e vs drain to source voltage figure 1 4. 0 50 1 00 150 200 250 0 2 4 6 8 10 i d = 80 a v dd = 20 v v dd = 15 v v dd = 25 v v gs , gate t o source voltage(v) q g , gat e charge(nc) gate charg e vs gate to source voltage
?2013 fairchil d semiconductor corporation 9 www.fairc h ildsemi.com FTCO3V455A1 rev . c2 FTCO3V455A1 3-phase inverter automotive power module mechanical characteristics and ratings fig. 1 5 . flatness measurement position package marking and ordering information parameter cond itio n limits unit min. typ. max. device flatness note fig.15 0 - +200 um weight devi ftc t ube 11 1 - - g 20 mounting tor que mounting screw: - m3, recommended 0.7n.m 0.6 0.7 0.8 n.m quantity packing type ce marking mosfet pcf33478 o3v455 a1
?2013 fairchil d semiconductor corporation 10 www.fairc h ildsemi.com FTCO3V455A1 rev . c2 FTCO3V455A1 3-phase inverter automotive power module detailed package outline drawings figure 16. vbat sense gate ls u gate hs u phase u sense gate hs v phase v sense gate ls v temp 2 temp 1 gate ls w gate hs w phase w sense shunt n shunt p vbat g n d phase u phase v phase w
?2013 fairchild s e miconductor corporation 11 www.fairchildsemi.com FTCO3V455A1 rev. c2 FTCO3V455A1 3-phase inverter automotive power module detailed package outline drawings figure 1 7.
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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* serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages cu stomers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 tm ?
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